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Preliminary Technical Information
PolarP TM Power MOSFET
(Electrically Isolated Tab)
IXTC36P15P
IXTR36P15P
V DSS
I D25
R DS(on)
= -150V
= - 22A
≤ 120m Ω
P-Channel Enhancement Mode
Avalanche Rated
ISOPLUS247 (IXTR)
E153432
Symbol
V DSS
Test Conditions
T J = 25 ° C to 175 ° C
Maximum Ratings
-150
V
G
D
S
Isolated
V DGR
V GSS
V GSM
T J = 25 ° C to 175 ° C, R GS = 1M Ω
Continuous
Transient
-150
± 20
± 30
V
V
V
ISOPLUS220 (IXTC)
E153432
I D25
I DM
I A
T C = 25 ° C
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
- 22
-100
- 36
A
A
A
G
D
S
Isolated
E AS
dv/dt
P D
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 175 ° C
T C = 25 ° C
1.5
10
150
J
V/ns
W
G = Gate
S = Source
D = Drain
T J
T JM
T stg
T L
T SOLD
V ISOL
F C
F C
Weight
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS, t = 1minute
Mounting Force (ISOPLUS220)
Mounting Force (ISOPLUS247)
ISOPLUS220
ISOPLUS247
- 55 ... +175
175
- 55 ... +175
300
260
2500
11..65 / 25..14.6
20..120 / 4.5..27
2
5
° C
° C
° C
° C
° C
V~
N/lb
N/lb
g
g
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V ~ Electrical Isolation
Avalanche Rated
Extended FBSOA
Fast Intrinsic Diode
Low R DS(ON) and Q G
Advantages
Easy to Mount
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
Space Savings
High Power Density
BV DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0V, I D = - 250 μ A
V DS = V GS , I D = - 250 μ A
V GS = ± 20V, V DS = 0V
V DS = V DSS , V GS = 0V
V GS = -10V, I D = -18A, Note 1
T J = 150 ° C
-150
- 3.0
V
- 5.0 V
± 100 nA
- 10 μ A
- 250 μ A
120 m Ω
Applications
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
? 2011 IXYS CORPORATION, All rights reserved
DS99792A(01/11)
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相关代理商/技术参数
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